Two-dimensional (2D) transistors hold promise for next-generation semiconductor chips due to their atomically thin structure， though interfacial Coulomb scattering hinders carrier mobility and performance. However， a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. This study presents a method to quantify Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors through low-frequency noise and transport analysis. It distinguishes long-range and short-range scattering effects， providing insights into interface engineering to enhance performance in ultrathin-body transistors.

Implemented by Department of Applied Physics and Chemistry
Date: 2024/12/27